Strain-Induced Control of Magnetic Anisotropy Energy in NbS2 Monolayer: First-Principles Study

Berton Maruli Siahaan, Afrioni Roma Rio
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Abstract

In this work, we investigate the strain controllability of magnetic anisotropy energy (MAE) in the monolayer form of niobium disulfide (NbS2) using density functional theory (DFT). Our calculation reveals a negative MAE of -1.82 meV, indicating a preference for spins to align in the in-plane directions (x or y). By systematically applying biaxial tensile strain to the NbS2 monolayer, ranging from 1% to 10%, we observe a linear relationship between strain and MAE. Interestingly, the strain-induced modulation of MAE leads to a remarkable phenomenon, where the easy axis of magnetization shifts from the in-plane to an out-of-plane orientation at a critical strain of 7%. This ability to switch the magnetic anisotropy by manipulating strain demonstrates the promising potential of NbS2 monolayer in the development of spintronic devices.
应变诱导的NbS2单层磁各向异性能控制:第一性原理研究
本文利用密度泛函理论(DFT)研究了二硫化铌(NbS2)单层结构中磁各向异性能(MAE)的应变可控性。我们的计算显示负MAE为-1.82 meV,表明自旋倾向于在平面内方向(x或y)排列。通过系统地对NbS2单层施加双轴拉伸应变,范围从1%到10%,我们观察到应变与MAE之间的线性关系。有趣的是,MAE的应变诱导调制导致了一个显著的现象,当临界应变为7%时,易磁化轴从面内方向转向面外方向。这种通过控制应变来切换磁各向异性的能力显示了NbS2单层在自旋电子器件开发中的巨大潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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