Thermodynamic property of one-dimensional hydrogenic impurity in Nitride semiconductor quantum well

IF 1.5 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Xue Liu, De-hua Wang, Xin-yu Xie, Bin-hua Chu, Shu-fang Zhang, Gang Zhao
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引用次数: 0

Abstract

ABSTRACTThe thermodynamic properties of one-dimensional (1-D) hydrogenic impurity in Nitride semiconductor quantum well have been investigated. Firstly, using a combination of the linear variational approach and the effective mass approximation, we obtain the eigen-energy of hydrogenic impurity states in AlN, GaN and InN quantum wells. Subsequently, we explore the quantum size effect on the thermodynamic properties of these low-dimensional semiconductor structures, revealing some novel and intriguing phenomena. It is found as the width of the quantum well is increased, the energy of hydrogenic impurity gets decreased, however, the thermodynamic parameters, such as the average energy, entropy and heat capacity of the hydrogenic impurity become increased. The physical origins of these peculiar phenomena are attributed to the competitive mechanism between the quantum confinement effect and Coulombic interaction between the electron and impurity. Finally, by conducting a comprehensive comparison of the thermodynamic parameters among GaN, InN, and AlN quantum wells, we propose an innovative strategy for modulating the thermodynamic properties of these low-dimensional semiconductor structures. This manipulation can be achieved not only through external factors such as temperature and quantum well size, but also by altering internal variables like the effective mass and relative dielectric constant of the semiconductor material. This study not only advances our understanding of the thermodynamic properties of hydrogenic impurities in semiconductor quantum wells, but also provides some theoretical guidance for practical applications in fields such as semiconductor physics, condensed matter physics, chemical physics, etc.KEYWORDS: Thermodynamic propertyhydrogenic impuritysemiconductor quantum welllow-dimensional structure AcknowledgementWe also thank the referees for their valuable suggestions.Disclosure statementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis work was supported by the Natural Science Foundation of Shandong Province, China (Grant Nos.ZR2019MA066 and ZR2020MF103), the Taishan Scholar Project of Shandong Province (grant number tsqn201812098), and the National Natural Science Foundation of China (Grant Nos. 11874191 and 62275115).
氮半导体量子阱中一维氢杂质的热力学性质
摘要研究了氮化物半导体量子阱中一维氢杂质的热力学性质。首先,采用线性变分方法和有效质量近似相结合的方法,得到了AlN、GaN和InN量子阱中氢杂质态的本征能。随后,我们探索了量子尺寸对这些低维半导体结构热力学性质的影响,揭示了一些新颖而有趣的现象。结果表明,随着量子阱宽度的增大,含氢杂质的能量减小,但含氢杂质的平均能量、熵和热容等热力学参数增大。这些奇特现象的物理根源是量子约束效应和电子与杂质之间的库仑相互作用之间的竞争机制。最后,通过对GaN、InN和AlN量子阱的热力学参数进行全面比较,我们提出了一种创新的策略来调节这些低维半导体结构的热力学特性。这种操作不仅可以通过温度和量子阱大小等外部因素实现,还可以通过改变半导体材料的有效质量和相对介电常数等内部变量来实现。本研究不仅加深了我们对半导体量子阱中含氢杂质热力学性质的认识,而且为半导体物理、凝聚态物理、化学物理等领域的实际应用提供了一定的理论指导。关键词:热力学性质;含氢杂质;半导体量子阱;低维结构披露声明作者未报告潜在的利益冲突。基金资助:山东省自然科学基金项目(批准号:zr2019ma066和ZR2020MF103)、山东省泰山学者计划项目(批准号:tsqn201812098)和国家自然科学基金项目(批准号:11874191和62275115)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Philosophical Magazine
Philosophical Magazine 工程技术-材料科学:综合
自引率
0.00%
发文量
93
审稿时长
4.7 months
期刊介绍: The Editors of Philosophical Magazine consider for publication contributions describing original experimental and theoretical results, computational simulations and concepts relating to the structure and properties of condensed matter. The submission of papers on novel measurements, phases, phenomena, and new types of material is encouraged.
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