A 4.4-6.4-GHz Compact SiGe Power Amplifier with 30.5-dBm Psat and 34.8% PAE Based on Triple-Tank Power Combiner

IF 0.8 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Ieice Electronics Express Pub Date : 2023-01-01 DOI:10.1587/elex.20.20230447

Wangyu Liu, Zonglin Ma, Kaixue Ma, Haipeng Fu

引用次数: 0

Abstract

This letter presents a broadband compact watt-level high-efficiency power amplifier (PA) in 0.35-μm SiGe BiCMOS process. A four-way triple-tank-based power combiner is introduced and theoretically analyzed in detail with the consideration of the undesired inductor in the third tank. The coupling coefficient and the uncoupling resonant frequencies of the tanks can be adjusted to compensate for the deterioration caused by the undesired inductor, achieving broadband and low-loss matching. The proposed PA operates over 4.4-6.4 GHz and exhibits a peak gain of 35.2 dB, a maximum saturated output power (Psat) of 30.5 dBm, and a peak power added efficiency (PAE) of 34.8% at 5.4 GHz.

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基于三槽功率合成器的30.5 dbm Psat和34.8% PAE的4.4-6.4 ghz紧凑型SiGe功率放大器

本文介绍了一种采用0.35 μm SiGe BiCMOS工艺的宽带紧凑型瓦级高效功率放大器(PA)。介绍了一种基于四路三槽的功率组合器，并对其进行了详细的理论分析，同时考虑了第三槽中的不期望电感。通过调节油箱的耦合系数和解耦谐振频率来补偿不需要的电感引起的劣化，实现宽带低损耗匹配。该放大器工作在4.4-6.4 GHz频段，峰值增益为35.2 dB，最大饱和输出功率(Psat)为30.5 dBm，峰值功率附加效率(PAE)为34.8%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Ieice Electronics Express 工程技术-工程：电子与电气

CiteScore

1.50

自引率

37.50%

发文量

119

审稿时长

1.1 months

期刊介绍： An aim of ELEX is rapid publication of original, peer-reviewed short papers that treat the field of modern electronics and electrical engineering. The boundaries of acceptable fields are not strictly delimited and they are flexibly varied to reflect trends of the fields. The scope of ELEX has mainly been focused on device and circuit technologies. Current appropriate topics include: - Integrated optoelectronics (lasers and optoelectronic devices, silicon photonics, planar lightwave circuits, polymer optical circuits, etc.) - Optical hardware (fiber optics, microwave photonics, optical interconnects, photonic signal processing, photonic integration and modules, optical sensing, etc.) - Electromagnetic theory - Microwave and millimeter-wave devices, circuits, and modules - THz devices, circuits and modules - Electron devices, circuits and modules (silicon, compound semiconductor, organic and novel materials) - Integrated circuits (memory, logic, analog, RF, sensor) - Power devices and circuits - Micro- or nano-electromechanical systems - Circuits and modules for storage - Superconducting electronics - Energy harvesting devices, circuits and modules - Circuits and modules for electronic displays - Circuits and modules for electronic instrumentation - Devices, circuits and modules for IoT and biomedical applications