A Broadband Reconfigurable Frequency-Selective Surface in Terahertz Band Based on Different Metal-Insulator Transition Temperature of VO<sub>2</sub>

IF 0.8 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Yanqing Cheng, Shuyun Lin, Qi Chen, Jinqi Dong, Lunyi Liu
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引用次数: 0

Abstract

In this paper, a broadband reconfigurable frequency-selective surface (FSS) in terahertz band based on different metal-insulator transition (MIT) temperature of vanadium dioxide (VO2) is proposed. By using different MIT temperature of VO2, the broadband reconfigurable design of the FSS is realized. The results show that the center frequency of the FSS is 2.15 THz and when the temperature is lower than 60℃, the relative bandwidth is 74.19%. When the temperature is between 60℃ and 72℃, the relative bandwidth is 55.59%. Above 72℃, the relative bandwidth is 33.78%. The FSS has broad application prospects in other emerging terahertz fields such as terahertz regulation and communication.
基于VO<sub>2</sub>金属-绝缘体转变温度的太赫兹宽带可重构选频表面
本文提出了一种基于二氧化钒(VO2)不同金属-绝缘体跃迁温度的太赫兹宽带可重构频率选择表面(FSS)。利用VO2的不同MIT温度,实现了FSS的宽带可重构设计。结果表明:FSS的中心频率为2.15 THz,当温度低于60℃时,相对带宽为74.19%;当温度在60 ~ 72℃之间时,相对带宽为55.59%。在72℃以上,相对带宽为33.78%。FSS在太赫兹调控、通信等新兴太赫兹领域具有广阔的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Ieice Electronics Express
Ieice Electronics Express 工程技术-工程:电子与电气
CiteScore
1.50
自引率
37.50%
发文量
119
审稿时长
1.1 months
期刊介绍: An aim of ELEX is rapid publication of original, peer-reviewed short papers that treat the field of modern electronics and electrical engineering. The boundaries of acceptable fields are not strictly delimited and they are flexibly varied to reflect trends of the fields. The scope of ELEX has mainly been focused on device and circuit technologies. Current appropriate topics include: - Integrated optoelectronics (lasers and optoelectronic devices, silicon photonics, planar lightwave circuits, polymer optical circuits, etc.) - Optical hardware (fiber optics, microwave photonics, optical interconnects, photonic signal processing, photonic integration and modules, optical sensing, etc.) - Electromagnetic theory - Microwave and millimeter-wave devices, circuits, and modules - THz devices, circuits and modules - Electron devices, circuits and modules (silicon, compound semiconductor, organic and novel materials) - Integrated circuits (memory, logic, analog, RF, sensor) - Power devices and circuits - Micro- or nano-electromechanical systems - Circuits and modules for storage - Superconducting electronics - Energy harvesting devices, circuits and modules - Circuits and modules for electronic displays - Circuits and modules for electronic instrumentation - Devices, circuits and modules for IoT and biomedical applications
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