Towards Optimizing Surface Coverage for PVP-Assisted PZT Ferroelectric Thick Film

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2023-09-02 DOI:10.1080/10584587.2023.2227057

Jayanta Parui, Mani R, Jain Jose, Shama Parwin, E. Varadarajan, V. Natarajan

引用次数: 0

Abstract

130,000 g/mol molecular weight of polyvinylpyrrolidone (PVP) was purposed to prepare PZT sol desiring the thick film (≥1.0 µm) deposition on Pt(111)/TiO2/SiO2/Si. Centrifugal force and the spilling of sol during spin coating were found to control the cracks and surface coverage of the films. A rotation-dependent typical pattern formation at the central part of the substrate was observed and better coverage was observed on gel drying 60 °C than 125 °C. Though the remnant polarization (2Pr) of 21.4 µC/cm2 was recorded at 100 Hz for 2.1 µm, it is 41.8 µC/cm2 for 1.06 µm thick films.

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pvp辅助PZT铁电厚膜表面覆盖度优化研究

以分子量为130,000 g/mol的聚乙烯吡咯烷酮(PVP)为原料，制备了在Pt(111)/TiO2/SiO2/Si表面沉积厚膜(≥1.0µm)的PZT溶胶。在旋转涂层过程中，离心力和溶胶的溢出控制了薄膜的裂纹和表面覆盖。在底物的中心部分观察到旋转依赖的典型图案形成，并且在凝胶干燥60°C时比在125°C时观察到更好的覆盖率。在100 Hz下，在2.1µm厚度下，残余极化(2Pr)为21.4µC/cm2，而在1.06µm厚度下，残余极化(2Pr)为41.8µC/cm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.