Structural and Electrical Transport Features of Bi ₄ Ti _2.9 Zr _0.1 O ₁₂

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2023-09-02 DOI:10.1080/10584587.2023.2239094

Krishna Auromun, Premananda Pradhan, Ram Naresh Prasad Choudhary

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Abstract

AbstractThis paper reports the structural, dielectric, and electrical properties of Zr (10%) substituted bismuth titanate with the chemical formula Bi4Ti2.9Zr0.1O12. The material possesses a distorted orthorhombic structure and space group of B2cb at room temperature. The Zr-substituted bismuth titanate has a high Curie temperature and good dielectric constant. In any case, the dielectric constant of the Zr doped ceramic is higher than that of pure bismuth titanate. The study of impedance properties revealed the relaxation process, negative temperature coefficient of resistance behavior, grain and grain boundary formation, and the space charge effect in the high-frequency region of the material. The AC conductivity study explained the activation of charge carriers and the associated hopping mechanisms. A smaller activation energy (Ea) is observed at the low temperatures than in the high-temperature range. The ferroelectric property is confirmed through the P ∼ E hysteresis loop of the material at room temperature.Keywords: DielectricferroelectricelectricalAC conductivityactivation energy Disclosure StatementNo potential conflict of interest was reported by the author(s).

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bi4 Ti 2.9 Zr 0.1 o12的结构和电输运特性

摘要本文报道了化学式为Bi4Ti2.9Zr0.1O12的Zr(10%)取代钛酸铋的结构、介电性能和电学性能。该材料在室温下具有畸变正交结构和B2cb空间群。锆取代钛酸铋具有较高的居里温度和良好的介电常数。在任何情况下，Zr掺杂陶瓷的介电常数都高于纯钛酸铋。阻抗特性的研究揭示了材料高频区域的弛豫过程、电阻行为的负温度系数、晶粒和晶界的形成以及空间电荷效应。交流电导率的研究解释了载流子的活化和相关的跳变机制。低温下的活化能(Ea)小于高温下的活化能(Ea)。通过材料在室温下的P ~ E磁滞回线证实了铁电性质。关键词:介质、铁电、交流电导率、活化能披露声明作者未报告潜在利益冲突。

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.