Hitesh Kumar, Pratiksha Agnihotri, Ratnamala Chatterjee, Radheshyam Rai
{"title":"Optimization of MPB for Sn Substituted Lead Bismuth Zirconate Titanate Thin Films by the Electromechanical Behavior Related to Energy Storage Capacity","authors":"Hitesh Kumar, Pratiksha Agnihotri, Ratnamala Chatterjee, Radheshyam Rai","doi":"10.1080/07315171.2023.2238173","DOIUrl":null,"url":null,"abstract":"AbstractIn this article, we examined the electromechanical behavior of Sn-substituted Lead Bismuth Zirconate Titanate thin films (PBZST thin films). Using the pulsed laser deposition technique (PLD), the thin film growth parameters of bismuth-doped PZST close to MPB were adjusted by varying the ∼(Zr, Sn)/Ti ratios. Thin films (∼250 nm) with the stoichiometric formula Pb0.985Bi0.01(Zr0.7Sn0.3)xTi1 – xO3, (x = 0.935, 0.940, 0.945, and 0.950) were grown on a Pt/TiO2/SiO2/Si substrate using PLD technique at optimized conditions. P-E loop confirms that MPB is near x = 0.945, and further PFM measurements also confirmed the same. Analyzing the PFM phase and amplitude hysteresis loops, local piezo-electric coefficient and remnant strain values were computed as d33 = 330 pm/V and 0.33 at the MPB composition (x = 0.945).Keywords: Electromechanicalceramicsenergy storageMPBpulsed laser depositionsubstrate Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":1.3000,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ferroelectrics Letters Section","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/07315171.2023.2238173","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
AbstractIn this article, we examined the electromechanical behavior of Sn-substituted Lead Bismuth Zirconate Titanate thin films (PBZST thin films). Using the pulsed laser deposition technique (PLD), the thin film growth parameters of bismuth-doped PZST close to MPB were adjusted by varying the ∼(Zr, Sn)/Ti ratios. Thin films (∼250 nm) with the stoichiometric formula Pb0.985Bi0.01(Zr0.7Sn0.3)xTi1 – xO3, (x = 0.935, 0.940, 0.945, and 0.950) were grown on a Pt/TiO2/SiO2/Si substrate using PLD technique at optimized conditions. P-E loop confirms that MPB is near x = 0.945, and further PFM measurements also confirmed the same. Analyzing the PFM phase and amplitude hysteresis loops, local piezo-electric coefficient and remnant strain values were computed as d33 = 330 pm/V and 0.33 at the MPB composition (x = 0.945).Keywords: Electromechanicalceramicsenergy storageMPBpulsed laser depositionsubstrate Disclosure StatementNo potential conflict of interest was reported by the author(s).
期刊介绍:
Ferroelectrics Letters is a separately published section of the international journal Ferroelectrics. Both sections publish theoretical, experimental and applied papers on ferroelectrics and related materials, including ferroelastics, ferroelectric ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, polymers and liquid crystals.
Ferroelectrics Letters permits the rapid publication of important, quality, short original papers on the theory, synthesis, properties and applications of ferroelectrics and related materials.