{"title":"Influence of sidewall grating etching depth on GaN-based distributed feedback laser diodes","authors":"Meixin FENG, Chuanjie Li, Yongjun Tang, Jianxun Liu, Xiujian Sun, Qian Sun, Qifa Liu, Ercan YILMAZ, Hui Yang","doi":"10.1088/1361-6463/ad0762","DOIUrl":null,"url":null,"abstract":"Abstract Conventional sidewall gratings in GaN-based distributed feedback (DFB) laser diode have a thick p-type layer, which may cause current spreading and carrier-induced anti-guiding effect, severely deteriorating the laser performance. In this study, we reported a novel fabrication technology to not only reduce the remaining p-type layer in the sidewall gratings, but also realize close-coupled sidewall gratings. Based on this, we further investigated the influence of sidewall grating etching depth on GaN-based DFB laser diodes. The results showed almost unchanged current injection efficiency, nearly coincided I-V curve and near-field emission width for shallow etched structure, which indicated that the current spreading was neglectable in GaN-based ridge structure laser diodes. Based on this analysis, GaN-on-Si DFB LDs with an emission wavelength of 414 nm, FWHM of 22pm, and SMSR of 19.1 dB were realized.","PeriodicalId":16833,"journal":{"name":"Journal of Physics D","volume":"4 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics D","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1361-6463/ad0762","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Abstract Conventional sidewall gratings in GaN-based distributed feedback (DFB) laser diode have a thick p-type layer, which may cause current spreading and carrier-induced anti-guiding effect, severely deteriorating the laser performance. In this study, we reported a novel fabrication technology to not only reduce the remaining p-type layer in the sidewall gratings, but also realize close-coupled sidewall gratings. Based on this, we further investigated the influence of sidewall grating etching depth on GaN-based DFB laser diodes. The results showed almost unchanged current injection efficiency, nearly coincided I-V curve and near-field emission width for shallow etched structure, which indicated that the current spreading was neglectable in GaN-based ridge structure laser diodes. Based on this analysis, GaN-on-Si DFB LDs with an emission wavelength of 414 nm, FWHM of 22pm, and SMSR of 19.1 dB were realized.
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