O. O. Vovk, A. V. Voloshin, E. V. Slyunin, L. I. Voloshina, S. I. Kryvonogov, S. V. Nizhankovskyi
{"title":"Rate of Material Removal When Processing Titanium-Doped Sapphire","authors":"O. O. Vovk, A. V. Voloshin, E. V. Slyunin, L. I. Voloshina, S. I. Kryvonogov, S. V. Nizhankovskyi","doi":"10.3103/S1063457623050106","DOIUrl":null,"url":null,"abstract":"<div><div><h3>\n <b>Abstract</b>—</h3><p>The effect of the content of titanium ions in the crystals of titanium-doped sapphire (Ti:sapphire, up to 0.2 wt % Ti) on the rate of material removal and surface roughness at different stages of its processing was studied. It was established that the efficiency of material removal increases with an increase in the density of dislocations in the crystal. It was detected that with an increase in the content of titanium in Ti:sapphire during grinding with a fixed abrasive, the rate of material removal decreases, while in the case of grinding and polishing with a free abrasive, it increases due to a disordering of the crystal structure and deterioration of structural perfection of the crystals. Doping of sapphire with titanium leads to a decrease in the value of the crystal surface roughness parameter at a grinding stage.</p></div></div>","PeriodicalId":670,"journal":{"name":"Journal of Superhard Materials","volume":"45 5","pages":"379 - 387"},"PeriodicalIF":1.2000,"publicationDate":"2023-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Superhard Materials","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.3103/S1063457623050106","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract—
The effect of the content of titanium ions in the crystals of titanium-doped sapphire (Ti:sapphire, up to 0.2 wt % Ti) on the rate of material removal and surface roughness at different stages of its processing was studied. It was established that the efficiency of material removal increases with an increase in the density of dislocations in the crystal. It was detected that with an increase in the content of titanium in Ti:sapphire during grinding with a fixed abrasive, the rate of material removal decreases, while in the case of grinding and polishing with a free abrasive, it increases due to a disordering of the crystal structure and deterioration of structural perfection of the crystals. Doping of sapphire with titanium leads to a decrease in the value of the crystal surface roughness parameter at a grinding stage.
期刊介绍：
Journal of Superhard Materials presents up-to-date results of basic and applied research on production, properties, and applications of superhard materials and related tools. It publishes the results of fundamental research on physicochemical processes of forming and growth of single-crystal, polycrystalline, and dispersed materials, diamond and diamond-like films; developments of methods for spontaneous and controlled synthesis of superhard materials and methods for static, explosive and epitaxial synthesis. The focus of the journal is large single crystals of synthetic diamonds; elite grinding powders and micron powders of synthetic diamonds and cubic boron nitride; polycrystalline and composite superhard materials based on diamond and cubic boron nitride; diamond and carbide tools for highly efficient metal-working, boring, stone-working, coal mining and geological exploration; articles of ceramic; polishing pastes for high-precision optics; precision lathes for diamond turning; technologies of precise machining of metals, glass, and ceramics. The journal covers all fundamental and technological aspects of synthesis, characterization, properties, devices and applications of these materials. The journal welcomes manuscripts from all countries in the English language.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
