A new modulating electric field structure with homo-type fixed interface charges

Li Qi, Luo Le, Li Haiou, L. Shiwei, Zhang Fabi, Yang Nianjiong
{"title":"A new modulating electric field structure with homo-type fixed interface charges","authors":"Li Qi, Luo Le, Li Haiou, L. Shiwei, Zhang Fabi, Yang Nianjiong","doi":"10.1109/ICAM.2017.8242168","DOIUrl":null,"url":null,"abstract":"In this paper, a new LDMOS on silicon-on-insulator (SOI) with homo-type fixed interface charges in the bottom of field oxide layer is proposed. The surface electric field can be improved by adding the fixed interface charges and optimizing the doping profile, which can effectively modulate electric field to obtain the optimization trade-off between the breakdown voltage and on-resistance. The numerical results indicate that the breakdown voltage of device proposed is increased by 40% and the on-resistance reduced by 44% in comparison to that of the conventional LDMOS.","PeriodicalId":117801,"journal":{"name":"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAM.2017.8242168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In this paper, a new LDMOS on silicon-on-insulator (SOI) with homo-type fixed interface charges in the bottom of field oxide layer is proposed. The surface electric field can be improved by adding the fixed interface charges and optimizing the doping profile, which can effectively modulate electric field to obtain the optimization trade-off between the breakdown voltage and on-resistance. The numerical results indicate that the breakdown voltage of device proposed is increased by 40% and the on-resistance reduced by 44% in comparison to that of the conventional LDMOS.
一种具有同型固定界面电荷的新型调制电场结构
本文提出了一种在场氧化层底部具有同型固定界面电荷的绝缘子上硅(SOI)的新型LDMOS。通过添加固定界面电荷和优化掺杂谱线可以改善表面电场,从而有效地调制电场,获得击穿电压和导通电阻之间的最佳权衡。数值结果表明,与传统的LDMOS相比,该器件的击穿电压提高了40%,导通电阻降低了44%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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