InP-based 1.3 μm and 1.55 μm short-cavity VCSELs suitable for telecom- and datacom-applications

Abstract

We review the state-of the art of long-wavelength VCSELs. Furthermore, the short-cavity concept which has already been successfully implemented in 1.55 μm devices is extended to 1.3 μm devices resulting in excellent static and dynamic device properties. In particular, high output powers of 1.8 mW at an ambient temperature of 80 °C, high differential quantum efficiencies up to 56% and wall-plug efficiencies up to 36% at room-temperature are reported. Small-signal modulation bandwidths in excess of 15 GHz are presented. The large-signal modulation at a bit-rate of 25 Gbps is investigated.