Low-pressure CMP for 300-mm ultra low-k (k=1.6-1.8)/Cu integration

Abstract

Toward the 45 nm technology node, multilevel Cu dual-damascene interconnects with hybrid-structure low-k ILDs (inter-line dielectrics) consisting of porous MSQ (methyl silsesquioxane) (k<1.6-1.8) and organic polymer films are successfully integrated on 300 mm wafers for the first time with a low-pressure CMP and dummy pattern technology, which supports the poor mechanical properties of ultra low-k films.