High voltage GaAs power rectifiers with low switching and conduction losses

Abstract

GaAs high voltage rectifiers are developed to provide short recovery time and significantly decrease switching losses experienced with Si rectifiers. Schottky and p-n diodes with 200 V and 600 V breakdown voltages were fabricated and found to improve circuit performance by increasing frequency and power density. Schottky diodes give small stored charge (5nC) and are ideal for high frequency power supplies, while p-n rectifiers allowing large current and soft recovery are advantageous as IGBT-freewheeling diodes. Stress testing and materials analysis performed indicate the robustness of GaAs, which is believed to allow the high temperature capability of GaAs to be fully utilized.<>