Influence of the annealing on the parameters of Shottky barriers to sulfur treated n-GaAs

Abstract

Effect of the thermal annealing (300–380µC, 5 min) of Ti/Au barriers to sulfur treated n-GaAs (100) on its parameters was studied. It was shown that the annealing temperature influences the height of barrier, the current-voltage ideality factor and the reverse voltage at 100 µA. The optimal annealing temperature was defined.