Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate

M. Bouslama, A. Al Hajjar, R. Sommet, F. Medjdoub, J. Nallatamby
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引用次数: 2

Abstract

This paper reports the full characterization and modeling of novel AlN/GaN HEMTs on silicon using a short gate length. This device has been optimized for high frequency analog circuits applications. The presented model includes DC and small-signal modeling steps taking into account the trapping effects. It contains a trap model inside the current source which allows to accurately predict gate-lag transient response and low frequency dispersion of the output admittance. The model is validated by comparing the 4 GHz load-pull measurement results with the simulation ones.
AIN/GaN HEMT 4×50μm在硅衬底上的俘获效应表征和电建模
本文报道了使用短栅极长度的新型硅上AlN/GaN hemt的完整表征和建模。该器件已针对高频模拟电路应用进行了优化。该模型包括考虑捕获效应的直流和小信号建模步骤。它在电流源内部包含一个陷阱模型,可以准确地预测门滞后瞬态响应和输出导纳的低频色散。通过4ghz负载-拉力测量结果与仿真结果的对比,验证了该模型的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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