RF MEMS devices: a brave new world for RF technology

J. Ehmke, J. Brank, A. Malczewski, B. Pillans, S. Eshelman, J. Yao, C. Goldsmith
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引用次数: 9

Abstract

The design, fabrication, and behavior of a microelectromechanical (MEM) capacitive membrane microwave switching device is described. The switching element consists of a thin metallic membrane, which has two states, actuated or unactuated, depending on the applied bias. A microwave signal is switched on and off when the membrane is switched between the two states. The devices are electrostatically actuated and are therefore ultra low power. They also have very linear behavior with extremely low signal distortion. The switches show a very low insertion loss of 0.07 dB and an isolation of 35 dB at 40 GHz. A variety of RF phase shifters and tuning circuits have been fabricated using these switches and show world-class RF loss behavior. These devices offer the potential for building a new generation of low-loss high-linearity microwave circuits for a variety of phased antenna arrays for radar and communications applications.
射频MEMS器件:射频技术的全新世界
介绍了一种微机电(MEM)电容膜微波开关器件的设计、制造和性能。开关元件由薄金属膜组成,根据施加的偏压有两种状态,驱动或非驱动。当膜在两种状态之间切换时,微波信号被打开或关闭。该设备是静电驱动的,因此功耗极低。它们还具有非常线性的行为,具有极低的信号失真。该开关显示非常低的插入损耗为0.07 dB,在40 GHz时隔离度为35 dB。各种射频移相器和调谐电路已经使用这些开关制造,并显示世界级的射频损耗性能。这些器件为雷达和通信应用的各种相控天线阵列提供了构建新一代低损耗高线性微波电路的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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