3Gb/s monolithically integrated photodiode and pre-amplifier in standard 0.18/spl mu/m CMOS

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) Pub Date : 2004-09-13 DOI:10.1109/ISSCC.2004.1332799

S. Radovanovic, A. Annema, B. Nauta

引用次数: 14

Abstract

A 3 Gb/s optical detector with integrated photodiode and pre-amplifier for 850 nm light is presented. The IC is implemented in standard 0.18 /spl mu/m CMOS. The data rate is achieved by using an inherently robust analog equalizer without sacrificing responsivity.

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3Gb/s单片集成光电二极管和前置放大器，标准0.18/spl mu/m CMOS

提出了一种集成光电二极管和前置放大器的3gb /s 850 nm光检测器。该IC采用标准的0.18 /spl mu/m CMOS实现。数据速率是通过使用固有的鲁棒模拟均衡器而不牺牲响应性来实现的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)

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