Mutators for transforming nonlinear resistor into memristor

D. Biolek, J. Bajer, V. Biolková, Z. Kolka
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引用次数: 41

Abstract

A method of analogue emulation of the memristor with its prescribed charge (qM) - flux (ϕM) constitutive relation is presented. The memristor is emulated via a resistor with nonlinear current (iR) - voltage (vR) relationship, and a mutator. The purpose of the mutator is to provide a similarity transformation of the current-voltage characteristic of the resistor into the constitutive relation of the memristor according to the equations qM=kyiR, ϕM =kxvR, or ϕM=kyiR, qM=kxvR, where kx, ky are real numbers fulfilling the condition kxky>0. It is shown that there are eight versions of these mutators. One of them is selected for experimental verification.
将非线性电阻器转换为忆阻器的变换器
提出了一种具有规定电荷(qM) -磁通(ϕM)本构关系的忆阻器的模拟仿真方法。该忆阻器是通过一个具有非线性电流(iR) -电压(vR)关系的电阻器和一个突变器来仿真的。变换器的目的是根据公式qM=kyiR, m =kxvR,或m =kyiR, qM=kxvR,其中kx, ky为满足条件kxky>0的实数,将电阻器的电流-电压特性相似地转换为忆阻器的本构关系。结果表明,这些突变体有8个版本。选取其中一个进行实验验证。
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