High rate growth of Ga/sub 0.47/In/sub 0.53/As/InP by chemical beam epitaxy

Abstract

High growth rates have been obtained for Ga/sub 0.47/In/sub 0.53/As and InP using chemical beam epitaxy. The GaInAs growth rate was controlled over the range from 1.2 to 6 mu m/h, the latter being the highest growth rate obtained without sacrificing the optical and electrical properties of the crystal. Good thickness controllability was demonstrated by growing multi-quantum-wells at growth rates of 5.15 and 2.5 mu m/h. An emission wavelength shift from 1.56 mu m to 1.1 mu m was observed in room temperature photoluminescence measurements. Based on X-ray spectra satellite peaks, well widths associated with these wavelength ranged from 80 AA to 10 AA. The results agree with theoretical calculations and show good thickness controllability and wavelength tunability at high growth rates.<>