High Gain GaAs Switches For Impulse Sources; Measurement Of The Speed Of Current Filaments

G. Loubriel, F. Zutavern, M. O’Malley, R. R. Gallegos, W. Helgeson, H. Hjalmarson, A. Baca, T. A. Plut
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引用次数: 10

Abstract

A high peak power impulse pulser that is controlled with high gain, optically triggered GaAs Photoconductive Semiconductor Switches (PCSS) has been constructed and tested. The system has a short 50 ohm line that is charged to 100 kV and discharged through the switch when the switch is triggered with as little as 90 nJ of laser energy. The authors have demonstrated that the GaAs switches can be used to produce either a monocycle or a monopulse with a period of total duration of about 3 ns. For the monopulse, the voltage switched was above 100 kV, producing a peak power of about 48 MW to the 30 ohm load at a burst repetition rate of 1 kHz. The laser that is used is a small laser diode array whose output is delivered through a fiber to the switch. The current in the system has rise times of 430 ps and a pulse width of 1.4 ns when two laser diode arrays are used to trigger the switch. The small trigger energy and switch jitter are due to a high gain switching mechanism in GaAs. This experiment also shows a relationship between the rise time of the voltage across the switchmore » and the required trigger energy and switch jitter. The time evolution of the current filaments in an optically triggered, high gain GaAs switch was studied by recording the infrared photoluminescence from the filaments. When the system is triggered with two laser diode arrays that are activated within 1 ns of each other, two current filaments are observed. By delaying one laser with respect to the other, the evolution of the filament was recorded in a time resolved fashion. The filament that is triggered first crosses the switch, the voltage drops and the other filament ceases to grow. By varying the delay between the trigger lasers, the tip velocity is measured to be up to 5.9 {+-} 1 {times} 10{sup 9} cm/s.« less
用于脉冲源的高增益GaAs开关电流细丝速度的测量
构建并测试了一种由高增益、光触发砷化镓光导半导体开关(PCSS)控制的峰值功率脉冲发生器。该系统有一条50欧姆的短线,充电至100千伏,当开关被低至90 nJ的激光能量触发时,通过开关放电。作者已经证明,GaAs开关可以用来产生单周期或单脉冲,总持续时间约为3ns。对于单脉冲,开关电压高于100千伏,以1千赫的突发重复率对30欧姆负载产生约48兆瓦的峰值功率。所使用的激光器是一个小型激光二极管阵列,其输出通过光纤传送到开关。当使用两个激光二极管阵列触发开关时,系统中的电流上升时间为430 ps,脉宽为1.4 ns。小的触发能量和开关抖动是由于高增益的GaAs开关机制。该实验还显示了开关侧电压的上升时间与所需触发能量和开关抖动之间的关系。通过记录光触发高增益砷化镓开关中电流灯丝的红外发光,研究了电流灯丝的时间演化。当两个激光二极管阵列在彼此相距1ns的范围内被激活时,可以观察到两个电流细丝。通过延迟一个激光相对于另一个,长丝的演变被记录在一个时间分辨的方式。被触发的灯丝首先穿过开关,电压下降,另一个灯丝停止生长。通过改变触发激光之间的延迟,测量到尖端速度高达5.9{+-}1{乘以}10{sup 9} cm/s。«少
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