Low temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT

Abstract

A high-gap strained GaInP material has been used to increase Schottky barrier height on InP. This is the first time GaInP has been used for high-electron-mobility transistor (HEMT) fabrication of InP. For these devices the best g/sub m/ for a 1.3- mu m gate HEMT is 300 mS/mm. Transistors of 3- mu m gate length have been studied at low temperature (100 K to 293 K). Their DC electrical characteristics improve upon cooling. The best improvement is obtained at the lowest temperature (+54% for g/sub m/ at 105 K). The structure is stable and does not undergo g/sub m/ or I/sub ds/ collapse at lower temperature, unlike AlGaAs/GaAs heterostructures.<>