AlGaN/GaN high electron mobility transistors on Si with sputtered TiN Gate

Abstract

Summary form only given. We have investigated the Schottky barrier diode (SBD) and device (DC and pulsed I-V) characteristics of AlGaN/GaN HEMTs fabricated with sputtered TiN Schottky gate. The measured Schottky barrier height (SBH) of TiN on Al0.26Ga0.74N/GaN HEMT structure are 1.126 and 1.105 eV by I-V and I-V-T measurements, respectively. No hysteresis is observed in between forward and reverse C-V sweeps of TiN SBD. Compared to Ni/Au Schottky gate, the HEMT with TiN gate shows comparable DC output and transfer characteristics, improved OFF-state breakdown voltage (VBRoff) with very small drain current collapse, indicating the feasibility of using sputtered TiN for the fabrication of CMOS-compatible AlGaN/GaN HEMTs.