High resolution body bias techniques for reducing the impacts of leakage current and parasitic bipolar

M. Sumita
{"title":"High resolution body bias techniques for reducing the impacts of leakage current and parasitic bipolar","authors":"M. Sumita","doi":"10.1145/1077603.1077653","DOIUrl":null,"url":null,"abstract":"With scaling process generation, power management techniques are more significant. Body bias techniques are useful for the solutions. We propose a high resolution body bias generation circuit which supplies optimal body bias in both the active and standby mode. By using this circuit, the adjustment accuracy of threshold voltage (Vt) in the active mode was improved about 4.1 times of the conventional circuits at 0.6V forward body bias condition. In addition, for standby mode, when 128 kByte SRAM was supplied back body bias by this generator, the off-state leakage current was reduced to 50% of a fixed back body bias.","PeriodicalId":256018,"journal":{"name":"ISLPED '05. Proceedings of the 2005 International Symposium on Low Power Electronics and Design, 2005.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISLPED '05. Proceedings of the 2005 International Symposium on Low Power Electronics and Design, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1077603.1077653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

With scaling process generation, power management techniques are more significant. Body bias techniques are useful for the solutions. We propose a high resolution body bias generation circuit which supplies optimal body bias in both the active and standby mode. By using this circuit, the adjustment accuracy of threshold voltage (Vt) in the active mode was improved about 4.1 times of the conventional circuits at 0.6V forward body bias condition. In addition, for standby mode, when 128 kByte SRAM was supplied back body bias by this generator, the off-state leakage current was reduced to 50% of a fixed back body bias.
用于降低泄漏电流和寄生双极影响的高分辨率体偏置技术
随着缩放过程的产生,电源管理技术变得更加重要。身体偏见技术对解决方案很有用。我们提出了一种高分辨率体偏产生电路,该电路在主机和待机模式下都能提供最佳的体偏。采用该电路,在0.6V正向偏置条件下,有源模式下阈值电压(Vt)的调整精度比传统电路提高了约4.1倍。此外,在待机模式下,当128 kByte的SRAM由该发生器提供后体偏置时,断开状态泄漏电流降低到固定后体偏置的50%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信