Accurate pre-layout estimation of standard cell characteristics

Hiroaki Yoshida, K. De, V. Boppana
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引用次数: 23

Abstract

With the advent of deep-submicron technologies, it has become essential to model the impact of physical/layout effects up front in all design flows \citeITRS02. The effect of layout parasitics is considerable even at the intra-cell level in standard cells. Hence, it has become critically important for any transistor-level optimization to consider the effect of these layout parasitics as an integral part of the optimization process. However, since it is not computationally feasible for the actual layout to be a part of any such optimization procedures, we propose a technique that estimates cell layout characteristics without actually performing the layout and subsequent extraction steps. We demonstrate in this work that it is indeed feasible to estimate the layout effects to get timing characteristics that are on average within about 1.5\% of post-layout timing and that the technique is thousands of times faster than the actual creation of layout.
准确的预布局估计标准电池特性
随着深亚微米技术的出现,在所有设计流程中预先模拟物理/布局效果的影响已变得至关重要。即使在标准细胞的细胞内水平,布局寄生的影响也是相当大的。因此,将这些布局寄生效应作为优化过程的一个组成部分,对于任何晶体管级优化都变得至关重要。然而,由于实际布局作为任何此类优化过程的一部分在计算上是不可行的,因此我们提出了一种技术,可以在不实际执行布局和随后的提取步骤的情况下估计单元布局特征。我们在这项工作中证明,通过估计布局效果来获得平均在布局后时间的1.5%左右的定时特性确实是可行的,并且该技术比实际创建布局快数千倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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