A new method to increase loaded Q of extremely low phase noise SAW oscillator

T. Imaike, Y. Sakuta, Y. Sekine
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Abstract

We have previously proposed a circuit configuration of SAW oscillator for extremely low phase noise, the name of which is Fr oscillator. The Fr oscillator has been able to realize extremely low phase noise floor level in calculation; however, the loaded Q is lower than Colpitts type oscillator. Then we propose new method to increase loaded Q. Using this method, we show several characteristics of the loaded Q. Based on the results, we estimate SSB phase noise of the Fr oscillator. As a result, the phase noise level is improved about 15 dB in the neighborhood of carrier frequency if the input/output impedance of the frequency selective circuit is reduced. Furthermore, we make a couple of Fr oscillators using crystal resonator. The measured phase noise characteristics are corresponding to the calculated value well. It is clear that this method is effective for improving phase noise of near the carrier frequency.
一种提高极低相位噪声SAW振荡器负载Q值的新方法
我们之前提出了一种超低相位噪声的SAW振荡器电路结构,其名称为Fr振荡器。在计算中,Fr振荡器能够实现极低的相位本底噪声;然而,负载Q比科尔皮茨型振荡器低。在此基础上,提出了提高加载q的新方法,给出了加载q的几个特性,并在此基础上估计了Fr振荡器的SSB相位噪声。结果表明,如果降低频率选择电路的输入/输出阻抗,则载波频率附近的相位噪声水平可提高约15 dB。此外,我们还利用晶体谐振器制作了一对Fr振荡器。测得的相位噪声特性与计算值吻合较好。结果表明,该方法对改善载波附近的相位噪声是有效的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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