Simulation analysis of switching performance of GaN power transistors in a high-voltage configuration

Abstract

The paper deals with the simulation analysis of the switching performance of a GaN power transistor connected in high voltage configuration (blocking capability of 1.2 kV). The evaluation was realized with the use of high-accurate simulation models of selected GaN transistors (GS66506T), while hard-switching performance in a wide range of operational conditions of transistors was varied (drain current, switching frequency). Experiments have been realized under consideration of 800 V of operational voltage what reflects operational conditions of transistor if 3-phase PFC is considered. The switching frequency was changed in the range of 100kHz–700kHz, while drain current was varied from 5 A–15 A. Parametric evaluation of switching losses under each operational condition was done. Achieved results are useful for optimization of the performance of target power semiconductor converter form thermal performance point of view, or efficiency point of view.