Measuring Junction Temperature Inhomogeneity of Double-chip IGBT Modules by Electrical Method

Abstract

The electrical method for measuring junction temperature inhomogeneity of IGBT modules has always been a scientific research problem in the field of microelectronics. This paper proposes a new type of electrical method for measuring junction temperature inhomogeneity, which is different from the conventional electrical methods using a single test condition. The collector currents measured in this paper are at high and low gate voltage, respectively. Based on the temperature calibration curve and the IGBT chips parallel model, the junction temperature inhomogeneity of the double-chip IGBT modules was analyzed successfully, and the junction temperature of the two chips were obtained respectively.