23-40 GHz InP HEMT MMIC distributed mixer

Abstract

The authors report the development of an active millimeter-wave InP high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) distributed mixer operating over the 23-40-GHz RF bandwidth, with IF frequencies in the range of 2-13 GHz and fixed local oscillator (LO) frequencies of 20 and 28 GHz. The devices were InGaAs-InAlAs-InP HEMTs with a gate length of 0.25 mu m. The mixer had an average conversion gain of 0 dB when biased for maximum bandwidth, and an average conversion gain of 5 dB when biased for maximum gain. The overall chip dimensions for this MMIC were 500*1000 mu m.<>