Experimental demonstration of integrated horizontal Cu-Si3N4-Cu plasmonic waveguide and passive components

Shiyang Zhu, G. Lo, D. Kwong
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Abstract

The Si3N4 waveguide offers very low propagation loss and feasibility for three-dimensional photonic integration, but it suffers from large optical mode size (thus low integration density) due to the relatively small refractive index contrast between the Si3N4 core and the SiO2 cladding. On the other hand, the metal-insulator-metal plasmonic waveguide offers very tight light confinement but it suffers from large propagation loss. In this work, we integrate Cu-Si3N4-Cu nanoplasmonic waveguides along with various passive components with the conventional Si3N4 waveguides. The Cu-Si3N4-Cu waveguide exhibits ~0.37-dB/μm propagation loss at telecommunication wavelengths of 1550 nm and ~45% coupling efficiency with the conventional 1-μm-wide S3N4 waveguide through a simple 2-μm-long tapered coupler. Ultracompact 1×2 and 1×4 plasmonic power splitters can split light almost equally with an excess loss of ~3.5 dB and ~1 dB, respectively.
集成水平Cu-Si3N4-Cu等离子波导和无源元件的实验演示
Si3N4波导提供了非常低的传播损耗和三维光子集成的可行性,但由于Si3N4核心和SiO2包层之间相对较小的折射率对比,它的光学模式尺寸大(因此集成密度低)。另一方面,金属-绝缘体-金属等离子体波导具有非常严格的光约束,但存在较大的传播损耗。在这项工作中,我们将Cu-Si3N4-Cu纳米等离子体波导以及各种无源元件与传统的Si3N4波导集成在一起。该Cu-Si3N4-Cu波导在1550 nm的通信波长下具有~0.37 db /μm的传输损耗,通过一个简单的2 μm长的锥形耦合器与传统的1 μm宽的S3N4波导具有~45%的耦合效率。超紧凑型1×2和1×4等离子体功率分离器几乎可以均匀地分裂光,额外损耗分别为~3.5 dB和~1 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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