Three-dimensional Field Sensing with Magnetotransistors

Abstract

An original p+-n -p+ magnetotransistors for subsequent measurement of three orthogonal magnetic components using a common sensor region is presented. Collector coupling-arrangements are formed for obtaining the information about the full magnetic-field vector. The operation is determined by curvilinear trajectory of holes and Lorentz force deflection on them. The channel outputs are linear and magnetosensitivities reaches Sx≈25µA/T, Sy≈150µA/T and Sz≈345µA/T for device with accelerating field in the base. The cross-talk reaches about 3.0 % at inductionB ≤ 1T.