Theoretical study of electronic properties of Zn1−x(TM)xO (TM=Mg,Cd)

C. Peng, hui-Qing Sun, Li-Ping Kong
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Abstract

The paper present study of the electronic and optical properties of Zn1−x(TM)x (TM=Mg,Cd), through density function theory (DFT) based on first-principles method. The calculation indicate that the band gap of Zn1−xCdxO narrows as result of the increasing concentrations of Cd. The paper shows that the Zn 4s and Cd 5s electron states broadens to low energy states and that the O2p electron states broadens to high energy states with increasing Cd-doping concentrations. The paper advances a possible theoretical mechanism of Cd-doped regulating Bands gap. Optical property of Zn1−x(TM)x (TM=Mg,Cd) is presented in the paper.
Zn1−x(TM)xO (TM=Mg,Cd)电子性质的理论研究
利用基于第一性原理的密度泛函理论(DFT)研究了Zn1−x(TM)x (TM=Mg,Cd)的电子和光学性质。计算表明,Zn1−xCdxO的带隙随着Cd浓度的增加而缩小。本文表明,随着Cd掺杂浓度的增加,Zn1−xCdxO的电子态向低能态展宽,Zn1−xCdxO的电子态向高能态展宽。本文提出了一种可能的掺杂镉调控带隙的理论机制。本文介绍了Zn1−x(TM)x (TM=Mg,Cd)的光学性质。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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