Frequency- and time-domain modeling tools for efficient RF/microwave transistor characterization

Abstract

Widely used in RF/microwave systems, active devices like field effect transistors (FETs) need to be accurately modeled to achieve a reliable system design. In this paper, the authors proposed two techniques for efficient FET modeling. First, a fuzzy-neural frequency-domain approach was developed to allow selecting the most suitable electrical equivalent circuit model of a FET. Then, a time-domain approach was investigated to help developing enhanced distributed transistor models.