High Power X-Band GaAs Field Effect Transistors

Abstract

Design considerations and processing techniques related to high power X-band GaAs field effect transistors will be presented. Particular emphasis will be placed on the problems associated with common lead inductance, gate-drain breakdown voltage and thermal resistance. The microwave performance of large periphery designs (up to 10 mms) will be reported. The superior performance of via-hole source connected devices with integral plated heat sinks will be stressed.