Temperature Investigations of InP/InGaAs Based Photocathodes

2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2018-10-01 DOI:10.1109/EEXPOLYTECH.2018.8564416

K. Smirnov, V. Davydov, G. V. Tushavin, S. Glagolev

引用次数: 2

Abstract

Application of InP/InGaAs photocathodes in devices, which work short-wave infrared range are justified. Construction of the vacuum photoelectronic detector is represented. All steps of creation effective photocathode based on the InP/InGaAs heterostructures were given. The effects of temperature variations on InP/InGaAs photocathode are investigated

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InP/InGaAs基光电阴极的温度研究

证明了InP/InGaAs光电阴极在短波红外器件中的应用。介绍了真空光电探测器的结构。给出了利用InP/InGaAs异质结构制备有效光电阴极的所有步骤。研究了温度变化对InP/InGaAs光电阴极的影响

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)

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