Interconnect Design and Technology Optimization for Conventional and Emerging Nanoscale Devices: A Physical Design Perspective

D. Prasad, A. Naeemi
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引用次数: 3

Abstract

Interconnect parasitics severely limit the performance and power dissipation in modern circuits at the advanced process technology nodes. Hence, device-level advances must be complemented with appropriate interconnect technology and design innovations for effective enablement at the circuit and system levels. This paper highlights the impact of device technologies on the optimal interconnect design and circuit-level metrics. The FinFET and Tunnel-FETs are studied by building fully placed-and-routed physical designs. The impact of device and interconnect technology co-optimization on circuit performance, power, and variability is shown for a range of emerging devices.
传统和新兴纳米器件的互连设计和技术优化:物理设计视角
互连寄生严重限制了现代电路在先进工艺技术节点上的性能和功耗。因此,设备级的进步必须与适当的互连技术和设计创新相辅相成,以便在电路和系统级有效实现。本文重点介绍了器件技术对最佳互连设计和电路级指标的影响。通过建立完全放置和路由的物理设计来研究FinFET和隧道fet。器件和互连技术共同优化对电路性能、功率和可变性的影响显示在一系列新兴器件中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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