A Reliability Study of Power GaAs FETs

1979 9th European Microwave Conference Pub Date : 1979-10-01 DOI:10.1109/EUMA.1979.332713

I. Drukier, J. Silcox

引用次数: 3

Abstract

Accelerated life tests on power GaAs FETs have shown these devices to be reliable components. At an operating temperature of 125°C a MTTF of 4 × 106 hours is predicted. The activation energy of this process is 1.8eV. Failures are related to the gate.

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功率GaAs场效应管的可靠性研究

功率GaAs fet的加速寿命测试表明，这些器件是可靠的组件。在125°C的工作温度下，预计MTTF为4 × 106小时。该过程的活化能为1.8eV。故障与门有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1979 9th European Microwave Conference

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