A Three Stage Ku-Band GaN HEMT Power Amplifier

Abstract

This paper describes the design of a Ku band power amplifier using GaN HEMTs. To obtain high efficiency, matching networks are incorporated into power amplifier. In order to design matching networks, the optimum source and load impedances are determined by the load pull analysis. As from single and two stage Ku band PAs do not provide the required gain for our requirement, a three stage Ku band PA is designed. At 13.63 GHz, the designed power amplifier provides more than 37.7dBm output power with large signal gain greater than 37dB and power added efficiency close to 40%.