Study of THz Oscillations in GaN-Based Planar Nanodevices

Abstract

The feasibility of THz oscillations in a GaN-based planar nanoscale unipolar diode, or a self-switching device (SSD), is analyzed using Monte Carlo simulations. The origin of THz oscillations is contributed to Gunn-effect. The dependence of the Gunn oscillations on geometric parameters and bias conditions has been studied. By using proper parameters, the oscillation frequency can reach 0.6 THz. Moreover, potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.