A Variable Gain E-Band Power Amplifier using Highly Linear Embedded Attenuator

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2019-01-01 DOI:10.1109/SIRF.2019.8709085

R. B. Yishay, D. Elad

引用次数: 1

Abstract

This paper presents a variable gain 81-86 GHz power amplifiers (PA) fabricated in a $0.12 \mu m$ SiGe BiCMOS technology. The PA consists of five common-emitter stages with power combining at the last stage and an intersatge linear nMOS attenuator. It achieves power gain of 24.4 dB, 14 dBm output power at 1dB compression, and saturated power of 17.1 dBm when no attenuation applied and 15 dB attenuation range. Small signal characteristics of the amplifier show peak gain at 84 GHz with 3 dB bandwidth of 12.5 GHz and 3 dB gain variation from -40°C to 85°C. The PA consumes quiescent currents of 117 mA from a 1.6 V supply and 170 mA at 1 dB compression.

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一种采用高线性嵌入式衰减器的可变增益e带功率放大器

本文介绍了一种采用0.12 μ m / SiGe BiCMOS技术制作的81-86 GHz可变增益功率放大器。该放大器由五个共发射极级组成，在最后一级进行功率组合和一个级间线性nMOS衰减器。其功率增益为24.4 dB，压缩1dB时输出功率为14dbm，无衰减时饱和功率为17.1 dBm，衰减范围为15db。放大器的小信号特性显示，在-40°C到85°C范围内，3db带宽为12.5 GHz，峰值增益为84 GHz, 3db增益变化。PA从1.6 V电源中消耗117 mA的静态电流，在1 dB压缩时消耗170 mA的静态电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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