A 19W high-efficiency wide-band CMOS-GaN class-E Chireix RF outphasing power amplifier

2011 IEEE MTT-S International Microwave Symposium Pub Date : 2011-06-05 DOI:10.1109/MWSYM.2011.5972564

M. van der Heijden, M. Acar, Jan S. Vromans, D. A. Calvillo-Cortes

引用次数: 86

Abstract

A class-E Chireix outphasing power amplifier is presented that enables high efficiency across a wide power back-off range and RF bandwidth. In this design the Chireix compensation elements and class-E loading conditions are provided by an asymmetric coupled-line power combiner. The class-E operated GaN HEMT switches are driven by high-speed, high-voltage CMOS drivers, implemented in a standard 65nm process technology. The proposed concept demonstrates 51.6% system average power efficiency and 65.1% average drain efficiency for a 7.5dB PAR WCDMA signal at 1.95GHz, while meeting the ACLR specifications. Moreover, the PA demonstrated more than 60% drain efficiency across a 6dB power back-off range and up to 19W peak power between 1800–2050MHz.

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一种19W高效率宽带CMOS-GaN e类Chireix射频共相功率放大器

提出了一种e类Chireix型共相功率放大器，该放大器在较宽的功率回退范围和射频带宽下具有较高的效率。在本设计中，Chireix补偿元件和e类负载条件由非对称耦合线功率合成器提供。e级操作GaN HEMT开关由高速高压CMOS驱动器驱动，采用标准65nm工艺技术实现。提出的概念在1.95GHz的7.5dB PAR WCDMA信号下，系统平均功率效率为51.6%，平均漏极效率为65.1%，同时满足ACLR规范。此外，在1800-2050MHz之间的6dB功率回退范围内，PA的漏极效率超过60%，峰值功率高达19W。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2011 IEEE MTT-S International Microwave Symposium

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