FREE-p: Protecting non-volatile memory against both hard and soft errors

D. Yoon, Naveen Muralimanohar, Jichuan Chang, Parthasarathy Ranganathan, N. Jouppi, M. Erez
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引用次数: 182

Abstract

Emerging non-volatile memories such as phase-change RAM (PCRAM) offer significant advantages but suffer from write endurance problems. However, prior solutions are oblivious to soft errors (recently raised as a potential issue even for PCRAM) and are incompatible with high-level fault tolerance techniques such as chipkill. To additionally address such failures requires unnecessarily high costs for techniques that focus singularly on wear-out tolerance. In this paper, we propose fine-grained remapping with ECC and embedded pointers (FREE-p). FREE-p remaps fine-grained worn-out NVRAM blocks without requiring large dedicated storage. We discuss how FREE-p protects against both hard and soft errors and can be extended to chipkill. Further, FREE-p can be implemented purely in the memory controller, avoiding custom NVRAM devices. In addition to these benefits, FREE-p increases NVRAM lifetime by up to 26% over the state-of-the-art even with severe process variation while performance degradation is less than 2% for the initial 7 years.
FREE-p:保护非易失性内存免受硬错误和软错误的侵害
新兴的非易失性存储器(如相变RAM (PCRAM))具有显著的优势,但存在写入持久性问题。然而,先前的解决方案忽略了软错误(最近甚至作为PCRAM的潜在问题提出),并且与高级容错技术(如chipkill)不兼容。此外,为了解决此类故障,需要为专注于磨损公差的技术提供不必要的高成本。在本文中,我们提出了使用ECC和嵌入式指针(FREE-p)的细粒度重映射。FREE-p重新映射细粒度磨损的NVRAM块,而不需要大型专用存储。我们讨论FREE-p如何防止硬错误和软错误,并可以扩展到芯片杀伤。此外,FREE-p可以完全在内存控制器中实现,避免定制NVRAM设备。除了这些优点之外,即使在严重的工艺变化下,FREE-p也将NVRAM的使用寿命提高了26%,而在最初的7年里,性能下降不到2%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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