Electrical properties of MIS diodes with insulating Langmuir-Blodgett thin films

Abstract

Electrical properties are investigated for metal-insulator-semiconductor diodes having Langmuir-Blodgett polydiacetylene (LB PDA) thin films. Capacitance-voltage characteristics measured for the Al-LB PDA-Si (MIS) diodes show reasonable capacitances for the accumulation. The C-V curves show hysteresis, and flatband voltage shifts are observed under the application of bias voltages. These results show charge injection from Si in the MIS diodes. Thermally stimulated currents (TSCs) are measured for Al-LB PDA-Al metal-insulator-metal structures. TSC peaks caused by dipole polarization and charge injection are observed in the low- and high-temperature regions respectively.<>