{"title":"Non-ideal Continuous Class-E PA Modes for Maximum Efficiency and Maximum Linearity","authors":"J. V. de Almeida, K. Wu","doi":"10.1109/IWS49314.2020.9359976","DOIUrl":null,"url":null,"abstract":"This paper presents the analysis of a class-E PA using an equivalent circuit model based on a look-up table generated by numerical simulation. The proposed methodology allows the direct determination of the drain voltage and current waveforms considering the transistor's triode region, finite switching time, and short-channel and thermal effects on saturation current. The revealed non-ideal space of high-efficient solutions is used to determine the class-E modes for maximum efficiency and maximum linearity. To support the theoretical results, a particular topology is implemented using a 25W-GaN transistor. The experimental results of the manufactured class-E are presented. Over a bandwidth of 2.37-2.41 GHz, the demonstrator has presented efficiency better than 75% with constant 42 dBm of continuous wave power.","PeriodicalId":301959,"journal":{"name":"2020 IEEE MTT-S International Wireless Symposium (IWS)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS49314.2020.9359976","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents the analysis of a class-E PA using an equivalent circuit model based on a look-up table generated by numerical simulation. The proposed methodology allows the direct determination of the drain voltage and current waveforms considering the transistor's triode region, finite switching time, and short-channel and thermal effects on saturation current. The revealed non-ideal space of high-efficient solutions is used to determine the class-E modes for maximum efficiency and maximum linearity. To support the theoretical results, a particular topology is implemented using a 25W-GaN transistor. The experimental results of the manufactured class-E are presented. Over a bandwidth of 2.37-2.41 GHz, the demonstrator has presented efficiency better than 75% with constant 42 dBm of continuous wave power.