An Integrated Field Emission Electron Source on a Chip Fabricated by Laser-Micromachining and Mems Technology

Abstract

A silicon field emission electron source consisting of a cathode and a grid electrode has been fabricated by laser micromachining. The cathode features 21×21 tips on an area of 4×4 mm2, With a self-aligning MEMS technology for the aperture grid, a high electron transmission (99 %) was achieved. Onset voltages of 50…70 V were observed for an emission current of 1 nA. A stable emission current of 1 mA ± 1.3 % at an extraction voltage of 250 V was observed during a 30-min operation.