Energy band gap characteristics of GaP1−xBix calculated using Quantum Dielectric Theory and Valence Band Anticrossing model

D. P. Samajdar, S. Dhar
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Abstract

Mathematical models based on Quantum Dielectric Theory(QDT) and Valence Band Anticrossing (VBAC) interaction have been used to explain the composition dependence of band gap for GaP1-xBix. The theoretically predicted bandgap of GaBi using QDT is used to calculate the band structure for the ternary alloy.
利用量子介电理论和价带抗交叉模型计算了GaP1−xBix的能带特性
基于量子介电理论(QDT)和价带抗交叉(VBAC)相互作用的数学模型解释了GaP1-xBix带隙的组分依赖性。利用QDT理论预测的GaBi带隙,计算了三元合金的能带结构。
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