Thermal management of quantum cascade lasers in an individually addressable monolithic array architecture

SPIE LASE Pub Date : 2016-04-22 DOI:10.1117/12.2208923
L. Missaggia, Christine A. Wang, M. Connors, B. Saar, A. Sanchez-Rubio, K. Creedon, G. Turner, W. Herzog
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引用次数: 9

Abstract

There are a number of military and commercial applications for high-power laser systems in the mid-to-long-infrared wavelength range. By virtue of their demonstrated watt-level performance and wavelength diversity, quantum cascade laser (QCL) and amplifier devices are an excellent choice of emitter for those applications. To realize the power levels of interest, beam combining of arrays of these emitters is required and as a result, array technology must be developed. With this in mind, packaging and thermal management strategies were developed to facilitate the demonstration of a monolithic QCL array operating under CW conditions. Thermal models were constructed and simulations performed to determine the effect of parameters such as array-element ridge width and pitch on gain region temperature rise. The results of the simulations were considered in determining an appropriate QCL array configuration. State-of-the-art micro-impingement cooling along with an electrical distribution scheme comprised of AlN multi-layer technology were integrated into the design. The design of the module allows for individual electrical addressability of the array elements, a method of phase control demonstrated previously for coherent beam combining of diode arrays, along with access to both front and rear facets. Hence, both laser and single-pass amplifier arrays can be accommodated. A module was realized containing a 5 mm cavity length monolithic QCL array comprised of 7 elements on 450 m pitch. An output power of 3.16 W was demonstrated under CW conditions at an emission wavelength of 9μm.
单个可寻址单片阵列架构中量子级联激光器的热管理
在中长红外波长范围内的高功率激光系统有许多军事和商业应用。由于量子级联激光器(QCL)和放大器器件具有良好的瓦级性能和波长多样性,是这些应用中极好的发射体选择。为了实现所需的功率水平,需要对这些发射器的阵列进行波束组合,因此必须开发阵列技术。考虑到这一点,开发了封装和热管理策略,以促进在连续波条件下运行的单片QCL阵列的演示。建立了热模型并进行了仿真,确定了阵列元件脊宽和节距等参数对增益区温升的影响。在确定合适的QCL阵列配置时考虑了模拟结果。最先进的微冲击冷却以及由AlN多层技术组成的配电方案被集成到设计中。该模块的设计允许对阵列元件进行单独的电子寻址,这是一种相位控制方法,先前用于二极管阵列的相干光束组合,以及对前后面的访问。因此,激光和单通道放大器阵列都可以被容纳。实现了一个包含腔长为5mm的单片QCL阵列的模块,该阵列由7个元件组成,间距为450m。在连续波条件下,发射波长为9μm,输出功率为3.16 W。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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