Quality Assessment of 980 nm GaAs Based Laser Diodes with Use of Low-Frequency Noise Measurements

Abstract

Low-frequency noise has always been a fast and non-destructive tool to characterise the performance and quality of materials and electrical devices. In this paper, a nondestructive method of predicting reliability was introduced for 980 nm GaAs based semiconductor laser diodes. Measurement and analysis were carried out for the noise and transport characteristics of forward voltage biases. The results demonstrated a close relationship between LD quality and the characteristic parameters of low-frequency noise such as frequency exponent, noise intensity and amplitude.