Q. Zhanga, A. Agarwal, C. Capell, L. Cheng, M. O'loughlin, A. Burk, J. Palmour, V. Temple, A. Ogunniyi, H. O’Brien, C. Scozzie
{"title":"SiC super GTO thyristor technology development: Present status and future perspective","authors":"Q. Zhanga, A. Agarwal, C. Capell, L. Cheng, M. O'loughlin, A. Burk, J. Palmour, V. Temple, A. Ogunniyi, H. O’Brien, C. Scozzie","doi":"10.1109/PPC.2011.6191677","DOIUrl":null,"url":null,"abstract":"Power devices made on Silicon Carbide (SiC) are expected to offer significant advantages over silicon due to its unique material properties. For pulse power applications, SiC Gate Turn-Off thyristors (GTOs) have been pursued as a substitute for present silicon-based, pulsed-power switches. An update on the device's performance since the pulse work presented at the 2009 Pulse Power Conference is highlighted in this paper. Detailed reviews of the development history, state of the art, and future perspective for developing 15 kV SiC GTOs are provided. Two of the latest results are presented in this paper: (1) A novel termination, utilizing negative bevel termination, has been used in high voltage SiC GTOs, resulting in a blocking voltage of 12 kV, (2) For the first time, we have demonstrated large area optically triggered GTOs made on SiC with ultrafast turnon speed of 70 ns.","PeriodicalId":331835,"journal":{"name":"2011 IEEE Pulsed Power Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Pulsed Power Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPC.2011.6191677","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27
Abstract
Power devices made on Silicon Carbide (SiC) are expected to offer significant advantages over silicon due to its unique material properties. For pulse power applications, SiC Gate Turn-Off thyristors (GTOs) have been pursued as a substitute for present silicon-based, pulsed-power switches. An update on the device's performance since the pulse work presented at the 2009 Pulse Power Conference is highlighted in this paper. Detailed reviews of the development history, state of the art, and future perspective for developing 15 kV SiC GTOs are provided. Two of the latest results are presented in this paper: (1) A novel termination, utilizing negative bevel termination, has been used in high voltage SiC GTOs, resulting in a blocking voltage of 12 kV, (2) For the first time, we have demonstrated large area optically triggered GTOs made on SiC with ultrafast turnon speed of 70 ns.
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