Implementation of On-chip OVP, OCP and OTP Circuits for DC-DC Converter Design

2018 IEEE 10th International Conference on Humanoid, Nanotechnology, Information Technology,Communication and Control, Environment and Management (HNICEM) Pub Date : 2018-11-01 DOI:10.1109/HNICEM.2018.8666254

Jennifer Ian G. Ligtao, C. M. Overstreet, Robert T. Nericua, O. J. Gerasta, J. Hora

{"title":"Implementation of On-chip OVP, OCP and OTP Circuits for DC-DC Converter Design","authors":"Jennifer Ian G. Ligtao, C. M. Overstreet, Robert T. Nericua, O. J. Gerasta, J. Hora","doi":"10.1109/HNICEM.2018.8666254","DOIUrl":null,"url":null,"abstract":"The integration of the three protection circuits namely, over-temperature, over-current, and over-voltage protection circuits for DC-DC Converter is implemented. The over-temperature protection circuit activates whenever the device temperature reaches 150 °C. Over-current condition is reached when current is equal to or more than 500mA which initializes the over-current protection circuit. An improved sensing circuit, which utilizes a gate driver, is implemented to boost its efficiency without using a conventional operational amplifier. When the converter produces an output voltage greater than the specified voltage requirement, the over-voltage protection circuit turns off the converter. The chip core design has a total area of 0.0137 mm2 and implemented in TSMC 90nm CMOS technology. All expected outputs are achieved based on the simulation results.","PeriodicalId":426103,"journal":{"name":"2018 IEEE 10th International Conference on Humanoid, Nanotechnology, Information Technology,Communication and Control, Environment and Management (HNICEM)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 10th International Conference on Humanoid, Nanotechnology, Information Technology,Communication and Control, Environment and Management (HNICEM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HNICEM.2018.8666254","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

Abstract

The integration of the three protection circuits namely, over-temperature, over-current, and over-voltage protection circuits for DC-DC Converter is implemented. The over-temperature protection circuit activates whenever the device temperature reaches 150 °C. Over-current condition is reached when current is equal to or more than 500mA which initializes the over-current protection circuit. An improved sensing circuit, which utilizes a gate driver, is implemented to boost its efficiency without using a conventional operational amplifier. When the converter produces an output voltage greater than the specified voltage requirement, the over-voltage protection circuit turns off the converter. The chip core design has a total area of 0.0137 mm2 and implemented in TSMC 90nm CMOS technology. All expected outputs are achieved based on the simulation results.

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片上OVP、OCP和OTP电路在DC-DC变换器设计中的实现

实现了DC-DC变换器的过温、过流、过压三种保护电路的集成。当设备温度达到150°C时，超温保护电路就会激活。当电流等于或大于500mA时达到过流状态，初始化过流保护电路。一种改进的传感电路，利用栅极驱动器，实现了提高其效率，而不使用传统的运算放大器。当变换器产生的输出电压大于规定的电压要求时，过电压保护电路将关闭变换器。芯片核心设计总面积为0.0137 mm2，采用台积电90nm CMOS技术实现。根据仿真结果，实现了所有预期输出。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 IEEE 10th International Conference on Humanoid, Nanotechnology, Information Technology,Communication and Control, Environment and Management (HNICEM)

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