A 24 GHz RFIC Power Amplifier Design in 0.25-um GaAs pHEMT Process

Abstract

This work is based on 0.25-um Gallium Arsenide (GaAs) (pHEMT) process. The GaAs pHEMT process, is chosen because it has been shown the most suitable technology to provide the high output power and a reasonable stability despite its high cost. A 24 GHz radio frequency integrated circuit (RFIC) Power Amplifier that is designed and simulated. The electromagnetic (EM) simulation and layout design are performed using the AWR Design Environment from the Cadence Company. The power amplifier is designed as a 2-way combining network with Class- AB topology. This RFIC Power Amplifier design achieves a power gain of 8.08 dB, Power Added Efficiency of 37.3%, P1dB of 24.82 dBm, P3dB of 25.37 dBm and PSAT of 28.14 dBm with the size of 3.36 mm2 (1.2 mm x 2.8 mm).